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| SEMiX 202GB12T4s Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMiX(R)2s Trench IGBT Modules SEMiX 202GB12T4s Inverse Diode Module Target Data Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications Remarks GB 1 13-07-2007 SCH (c) by SEMIKRON SEMiX 202GB12T4s Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMiX(R)2s Trench IGBT Modules Module SEMiX 202GB12T4s Target Data Features Temperature sensor Typical Applications This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. Remarks This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GB 2 13-07-2007 SCH (c) by SEMIKRON SEMiX 202GB12T4s Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 13-07-2007 SCH (c) by SEMIKRON SEMiX 202GB12T4s Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' 4 13-07-2007 SCH (c) by SEMIKRON SEMiX 202GB12T4s 5 13-07-2007 SCH (c) by SEMIKRON |
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